Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/105470
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dc.contributor.authorAmirsoleimani, A.en
dc.contributor.authorShamsi, J.en
dc.contributor.authorAhmadi, M.en
dc.contributor.authorAhmadi, A.en
dc.contributor.authorAlirezaee, S.en
dc.contributor.authorMohammadi, K.en
dc.contributor.authorKarami, M.en
dc.contributor.authorYakopcic, C.en
dc.contributor.authorKavehei, O.en
dc.contributor.authorAl-Sarawi, S.en
dc.date.issued2017en
dc.identifier.citationMicroelectronics Journal, 2017; 65:49-57en
dc.identifier.issn0026-2692en
dc.identifier.urihttp://hdl.handle.net/2440/105470-
dc.description.abstractAbstract not availableen
dc.description.statementofresponsibilityAmirali Amirsoleimani, Jafar Shamsi, Majid Ahmadi, Arash Ahmadi, Shahpour Alirezaee, Karim Mohammadi, Mohammad Azim Karami, Chris Yakopcic, Omid Kavehei, Said Al-Sarawien
dc.language.isoenen
dc.publisherMackintosh Publicationsen
dc.rights© 2017 Elsevier Ltd. All rights reserved.en
dc.subjectMemristor; Model; Hybrid circuit; SPICE; Tunneling; Thermionic; Ohmic currenten
dc.titleAccurate charge transport model for nanoionic memristive devicesen
dc.typeJournal articleen
dc.identifier.rmid0030070416en
dc.identifier.doi10.1016/j.mejo.2017.05.006en
dc.identifier.pubid355216-
pubs.library.collectionElectrical and Electronic Engineering publicationsen
pubs.library.teamDS01en
pubs.verification-statusVerifieden
pubs.publication-statusPublished onlineen
dc.identifier.orcidAl-Sarawi, S. [0000-0002-3242-8197]en
Appears in Collections:Electrical and Electronic Engineering publications

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