Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/113788
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Type: Journal article
Title: Direct-patterning SWCNTs using dip pen nanolithography for SWCNT/silicon solar cells
Author: Corletto, A.
Yu, L.
Shearer, C.
Gibson, C.
Shapter, J.
Citation: Small, 2018; 14(16):1800247-1-1800247-8
Publisher: Wiley
Issue Date: 2018
ISSN: 1613-6810
1613-6829
Statement of
Responsibility: 
Alexander Corletto, LePing Yu, Cameron J. Shearer, Christopher T. Gibson, and Joseph G. Shapter
Abstract: Dip pen nanolithography (DPN) is used to pattern single-walled carbon nanotube (SWCNT) lines between the n-type Si and SWCNT film in SWCNT/Si solar cells. The SWCNT ink composition, loading, and DPN pretreatment are optimized to improve patterning. This improved DPN technique is then used to successfully pattern >1 mm long SWCNT lines consistently. This is a 20-fold increase in the previously reported direct-patterning of SWCNT lines using the DPN technique, and demonstrates the scalability of the technique to pattern larger areas. The degree of the uniformity of SWCNTs in these lines is further characterized by Raman spectroscopy and scanning electron microscopy. The patterned SWCNT lines are used as thin conductive pathways in SWCNT/Si solar cells, similar to front contact electrodes. The critical parameters of these solar cells are measured and compared to control cells without SWCNT lines. The addition of SWCNT lines increases power conversion efficiency by 40% (relative). Importantly, the SWCNT lines reduce average series resistance by 44%, and consequently increase average fill factor by 24%.
Keywords: dip pen nanolithography; single-walled carbon nanotubes; SWCNT/Si solar cells
Description: Published online: March 25, 2018
Rights: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
RMID: 0030084791
DOI: 10.1002/smll.201800247
Grant ID: http://purl.org/au-research/grants/arc/DP150101354
http://purl.org/au-research/grants/arc/DP160101301
Appears in Collections:Chemistry publications

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