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Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/16586
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dc.contributor.authorWithayachumnankul, W.-
dc.contributor.authorFerguson, B.-
dc.contributor.authorRainsford, T.-
dc.contributor.authorMickan, S.-
dc.contributor.authorAbbott, D.-
dc.date.issued2005-
dc.identifier.citationElectronics Letters, 2005; 41(14):800-801-
dc.identifier.issn0013-5194-
dc.identifier.issn1350-911X-
dc.identifier.urihttp://hdl.handle.net/2440/16586-
dc.description© 2005 Institution of Engineering and Technology-
dc.description.abstractA simple and precise method based on fixed-point iteration is used to estimate dielectric parameters using terahertz time-domain spectroscopy (THz-TDS). The method converges and gives correct parameters when the sample thickness is greater than 200 mm at a frequency of 0.1 THz or 20 mm at a frequency of 1.0 THz. The technique in validated using measured terahertz data, obtained by probing a sample of high-resistivity silicon.-
dc.description.statementofresponsibilityW. Withayachumnankul, B. Ferguson, T. Rainsford, S.P. Mickan, and D. Abbott-
dc.language.isoen-
dc.publisherIEE-Inst Elec Eng-
dc.source.urihttp://dx.doi.org/10.1049/el:20051467-
dc.titleSimple material parameter estimation via terahertz time-domain spectroscopy-
dc.typeJournal article-
dc.identifier.doi10.1049/el:20051467-
pubs.publication-statusPublished-
dc.identifier.orcidWithayachumnankul, W. [0000-0003-1155-567X]-
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]-
Appears in Collections:Aurora harvest 6
Electrical and Electronic Engineering publications

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