Please use this identifier to cite or link to this item: http://hdl.handle.net/2440/70699
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Type: Conference paper
Title: Fabrication and modeling of Ag/TiO2/ITO memristor
Author: Kavehei, O.
Cho, K.
Lee, S.
Kim, S.
Al-Sarawi, S.
Abbott, D.
Eshraghian, K.
Citation: Proceedings of the 2011 IEEE 54th International Midwest Symposium on Circuits and Systems, 2011; pp.1-4
Publisher: IEEE
Publisher Place: USA
Issue Date: 2011
Series/Report no.: Midwest Symposium on Circuits and Systems Conference Proceedings
ISBN: 9781612848563
ISSN: 1548-3746
Conference Name: International Midwest Symposium on Circuits and Systems (54th : 2011 : Seoul, Korea)
Statement of
Responsibility: 
Omid Kavehei, Kyoungrok Cho, Sangjin Lee, Sung-Jin Kim, Said Al-Sarawi, Derek Abbott, Kamran Eshraghian
Abstract: The nanometer scale feature of memristor created a broad range of opportunities for innovative architectures. The nature of the boundary conditions, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor introduces new challenges in modeling, characterization, and measurements for Memristor-MOS (M2) circuits. These new challenges can be addressed by a joint insight from the circuit designer and device engineers, which will dictate the needed modeling and layout rules to attain an accurate estimation of M2 circuit performance. In this paper, memristive behavior of titanium dioxide (TiO2) is studied using a novel combination of electrodes, silver (Ag) and indium thin oxide (ITO). Fabrication method and a modeling approach are also explained. The ITO electrode provide (a) an excellent transparency in visible light, (b) improved functional reproducibility, and (c) non-volatile characteristics as well as a promising unique application of the M2 circuits in sensory applications. Furthermore, proposed modeling approach shows a good agreement between measurements and simulations of analog memory characteristics and reproducibility as well as long-term retention.
Rights: © IEEE
RMID: 0020115426
DOI: 10.1109/MWSCAS.2011.6026575
Appears in Collections:Electrical and Electronic Engineering publications

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