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https://hdl.handle.net/2440/117242
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Type: | Journal article |
Title: | Application of hole-transporting materials as the interlayer in graphene oxide/single-wall carbon nanotube silicon heterojunction solar cells |
Author: | Yu, L. Grace, T. Pham, H.D. Batmunkh, M. Dadkhah, M. Shearer, C. Sonar, P. Shapter, J. |
Citation: | Australian Journal of Chemistry: an international journal for chemical science, 2017; 70(11):1202-1211 |
Publisher: | CSIRO Publishing |
Issue Date: | 2017 |
ISSN: | 0004-9425 1445-0038 |
Statement of Responsibility: | LePing Yu, Tom Grace, Hong Duc Pham, Munkhbayar Batmunkh, Mahnaz Dadkhah, Cameron Shearer, Prashant Sonar and Joe Shapter |
Abstract: | Solid-state hole-transporting materials, including the traditional poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), and recently developed 4,4′-(naphthalene-2,6-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (NAP) and (E)-4′,4‴-(ethene-1,2-diyl)bis(N,N-bis(4-methoxyphenyl)-[1″,1‴-biphenyl]-4-amine) (BPV), have been applied as a hole-transporting interlayer (HTL) for graphene oxide/single-walled carbon nanotube–silicon (GOCNT/Si) heterojunction solar cells, forming a GOCNT/HTL/Si architecture. The influence of the thickness of the HTL has been studied. A new AuCl3 doping process based on bath immersion has been developed and proved to improve the efficiency. With the AuCl3-doped GOCNT electrodes, the efficiency of GOCNT/PEDOT:PSS/Si, GOCNT/NAP/Si, and GOCNT/BPV/Si devices was improved to 12.05 ± 0.21, 10.57 ± 0.37, and 10.68 ± 0.27 % respectively. This study reveals that the addition of an HTL is able to dramatically minimise recombination at the heterojunction interface. |
Rights: | Journal compilation © CSIRO 2017 |
DOI: | 10.1071/CH17380 |
Grant ID: | http://purl.org/au-research/grants/arc/FT130101337 http://purl.org/au-research/grants/arc/DP150101354 http://purl.org/au-research/grants/arc/DP160101301 |
Published version: | http://dx.doi.org/10.1071/ch17380 |
Appears in Collections: | Aurora harvest 8 Chemical Engineering publications |
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